ordering information specify part number followed by option number (if desired). CNY17-3-xxxx option number 060 = iec/en/din en 60747-5-2 option w00 = 0.4" lead spacing option 300 = lead bend smd option 500 = tape and reel packaging option xxxe = lead free option agilent cny17-x phototransistor optocoupler high collector-emitter voltage type data sheet features ? high collector-emitter voltage (v ceo = 70 v) ? high input-output isolation voltage (v iso = 5000 vrms) ? current transfer ratio (ctr: min. 40% at i f = 10 ma, v ce = 5 v) ? response time (t r : typ., 5 m s at v cc = 10 v, i c = 2 ma, r l = 100 w ) ? dual-in-line package ? ul approved ? csa approved ? iec/en/din en 60747-5-2 approved ? options available: C leads with 0.4" (10.16 mm) spacing (w00) C leads bends for surface mounting (300) C tape and reel for smd (500) C iec/en/din en 60747-5-2 approvals (060) applications ? system appliances, measuring instruments ? signal transmission between circuits of different potentials and impedances ? feedback circuit in power supply description the cny17 contains a light emitting diode optically coupled to a photo- transistor. it is packaged in a 6-pin dip package and available in wide- lead spacing option and lead bend smd option. collector-emitter voltage is above 70 v. response time, t r , is typically 5 m s and minimum ctr is 40% at input current of 10 ma. functional diagram schematic caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. 6 54 123 pin no. and internal
connection diagram 1. anode
2. cathode
3. nc 4. emitter
5. collector
6. base 1 2 anode cathode v f + i f 6 5 4 base collector emitter i c
2 package outline drawings package outline C option w00 package outline C option 300 123 4 5 6 type number option code
for option 060
only pin one dot date code a cny17- v yyww 6.5 ?0.5
(0.256) dimensions in millimeters and (inches) 7.3 ?0.5
(0.287) 2.8 ?0.5
(0.110) 2.54 ?0.25
(0.1) 0.5 ?0.1
(0.02) 3.5 ?0.5
(0.138) 3.3 ?0.5
(0.13) 0.5
(0.02) 7.62 ?0.3
(0.3) 0.35 +0.15/-0.10
(0.14) 7.62 ~ 9.98 typ. 6.5 ?0.5
(0.256) dimensions in millimeters and (inches) 7.3 ?0.5
(0.287) 2.8 ?0.5
(0.110) 2.54 ?0.25
(0.1) 0.5 ?0.1
(0.02) 3.5 ?0.5
(0.138) 7.62 ?0.3
(0.3) 0.35 +0.15/-0.10
(0.014) 10.16 ?0.5
(0.4) 2.3 ?0.5
(0.09) 6.9 ?0.5
(0.272) 6.5 ?0.5
(0.256) dimensions in millimeters and (inches) 7.3 ?0.5
(0.287) 2.54 ?0.25
(0.1) 3.5 ?0.5
(0.138) 7.62 ?0.3
(0.3) 0.35 +0.15/-0.10
(0.014) 10.16 ?0.3
(0.4) 1.2 ?0.1
(0.047) 0.35 ?0.25
(0.014) 1.0 ?0.25
(0.039)
3 absolute maximum ratings storage temperature, t s C55?c to +150?c operating temperature, t a C55?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 60 ma reverse input voltage, v r 6 v input power dissipation, p i 100 mw collector current, i c 150 ma collector-emitter voltage, v ceo 70 v emitter-collector voltage, v eco 6 v collector-base voltage, v cbo 70 v collector power dissipation 150 mw total power dissipation 250 mw isolation voltage, v iso (ac for 1 minute, r.h. = 40 ~ 60%) 5000 vrms * ctr = x 100% i c i f electrical specifications (t a = 25?c) parameter symbol min. typ. max. units test conditions forward voltage v f C 1.4 1.7 v i f = 60 ma reverse current i r CC 10 m av r = 6 v terminal capacitance c t C C 100 pf v = 0, f = 1 mhz collector dark current i ceo CC 50nav ce = 10 v collector-emitter breakdown voltage bv ceo 70 C C v i c = 0.1 ma, i f = 0 emitter-collector breakdown voltage bv eco 6C Cv i e = 10 m a, i f = 0 collector-base breakdown voltage bv cbo 70 C C v i c = 0.1 ma, i f = 0 collector current i c 4 C 32 ma i f = 10 ma *current transfer ratio cny17-1 ctr 40 C 80 % v ce = 5 v cny17-2 63 C 125 CNY17-3 100 C 200 cny17-4 160 C 320 collector-emitter saturation voltage v ce(sat) C C 0.3 v i f = 10 ma, i c = 2.5 ma response time (rise) t r C5 10 m sv ce = 5 v, i c = 10 ma response time (fall) t f C5 10 m sr l = 100 w isolation resistance r iso 1 x 10 11 CC w dc 500 v 40 ~ 60% r.h. floating capacitance c f C C 2 pf v = 0, f = 1 mhz
4 ctr ?current transfer ratio ?% 0 i f ?forward current ?ma 250 120 10 40 80 200 520 0 160 v ce = 5 v
t a = 25? r be = 100 k w 180 140 100 60 20 500 k w figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 5. current transfer ratio vs. forward current. figure 6. collector current vs. collector- emitter voltage. figure 7. relative current transfer ratio vs. temperature. figure 8. collector-emitter saturation voltage vs. temperature. figure 9. collector dark current vs. temperature. figure 3. frequency response. figure 4. forward current vs. forward voltage. i f ?forward current ?ma 0 t a ?ambient temperature ?? -25 75 125 60 25 20 40 0 50 100 -55 80 p c ?collector power dissipation ?mw 0 t a ?ambient temperature ?? -25 75 125 100 25 50 200 0 50 100 -55 150 160 i f ?forward current ?ma 1 v f ?forward voltage ?v 2.0 3.0 10 5 500 1.0 0 t a = 75? 0.5 1.5 2.5 2 20 50 100 200 t a = 50? t a = 25? t a = 0? t a = -25? i c ?collector current ?ma 0 v ce ?collector-emitter voltage ?v 810 30 15 45 2 0 p c (max.) t a = 25? i f = 30 ma i f = 20 ma i f = 10 ma i f = 5 ma i f = 2 ma 10 5 20 25 35 40 46 relative current transfer ratio ?% 0 100 50 150 v ce = 5 v i f = 10 ma t a ?ambient temperature ?? -25 75 25 0 50 100 -55 i ceo ?collector dark current ?a 10 -13 80 20 0 40 100 -30 t a ?ambient temperature ?? v ce = 10 v 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 60 voltage gain av ?db -10 f ?frequency ?khz 1 20 500 -2 5 -8 -6 2 21050 0.5 0 100 200 r l = 200 w i f = 10 ma
v cc = 5 v
t a = 25? r l = 150 w r l = 75 w -4 v ce(sat.) ?collector-emitter
saturation voltage ?v 0 t a ?ambient temperature ?? -25 75 25 0.02 0.16 0 50 100 -55 0.10 i c = 2.5 ma i f = 10 ma 0.04 0.06 0.08 0.12 0.14
5 v cc r d input r l output input output 10% 90% t t t t f d s r figure 11. collector-emitter saturation voltage vs. forward current. figure 10. response time vs. load resistance. test circuit for response time test circuit for frequency response v cc r d r l output ~ 0 i f ?forward current ?ma 7.5 12.5 2 5.0 0 2.5 10.0 1 3 4 5 6 v ce(sat.) ?collector-emitter
saturation voltage ?v t a = 25? i c = 0.5 ma i c = 1 ma i c = 2 ma i c = 3 ma i c = 5 ma response time ?? r l ?load resistance ?k w 0.5 1 0.05 0.5 0.02 0.2 2 i f = 10 ma
v cc = 5 v
t a = 25? tf 0.1 5 10 tr
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2003 agilent technologies, inc. obsoletes 5988-4113en november 4, 2003 5989-0290en
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